Threshold Voltage Variations in N-channel Mos Transistors and Mosfet-based Sensors Due to Optical Radiation
نویسنده
چکیده
The mfluence of optical radlatlon on the MOSFET threshold voltage has been mvestlgated theoretically as well as experimentally For conventlonal MOSFETs the influence 1s neghglble, but for open-gate FET-based sensors, such as the ISFET, optIcal radiation can cause a considerable threshold voltage shift An explanation of the threshold voltage shrft due to lllummatlon 1s given, based on the analysis of quasi-equlllbnum effects in an lllummated semiconductor surface layer The relation between the threshoid voltage and the optical radiation intensity has been derwed Exper~en~ results are gwen
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تاریخ انتشار 2001